Stranski, Krastanov, and Kaischew, and their influence on the founding of crystal growth theoryTASSEV, Vladimir L; BLISS, David F.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4209-4216, issn 0022-0248, 8 p.Article

Vertical gradient freezing of doped gallium-antimonide semiconductor crystals using submerged heater growth and electromagnetic stirringMA, Nancy; BLISS, David F; ISELER, Gerald W et al.Journal of crystal growth. 2003, Vol 259, Num 1-2, pp 26-35, issn 0022-0248, 10 p.Article

5th International Workshop on Crystal Growth Technology, Berlin, Germany, 26 June-30 June 2011UECKER, Reinhard; BLISS, David F; GANSCHOW, Steffen et al.Journal of crystal growth. 2012, Vol 360, issn 0022-0248, 204 p.Conference Proceedings

Spectral Evidence of Si Complexes in HVPE-Grown GaAsBOHN, Matthew J; GUINEY, William; LYNCH, Candace et al.IEEE transactions on semiconductor manufacturing. 2011, Vol 24, Num 4, pp 519-522, issn 0894-6507, 4 p.Article

Melt motion during liquid-encapsulated Czochralski crystal growth in steady and rotating magnetic fieldsMEI YANG; MA, Nancy; BLISS, David F et al.International journal of heat and fluid flow. 2007, Vol 28, Num 4, pp 768-776, issn 0142-727X, 9 p.Article

Semiconductor crystal growth by modified vertical gradient freezing with electromagnetic stirringXIANGHONG WANG; MA, Nancy; BLISS, David F et al.Journal of thermophysics and heat transfer. 2005, Vol 19, Num 1, pp 95-100, issn 0887-8722, 6 p.Article

Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growthXIN LIU; LIJUN LIU; ZAOYANG LI et al.Journal of crystal growth. 2012, Vol 360, pp 38-42, issn 0022-0248, 5 p.Conference Paper

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001 ) sapphire substratesTOGASHI, Rie; NAGASHIMA, Toru; HARADA, Manabu et al.Journal of crystal growth. 2012, Vol 360, pp 197-200, issn 0022-0248, 4 p.Conference Paper

Single crystals of novel alkali metal intercalated iron chalcogenide superconductorsKRZTON-MAZIOPA, A; POMJAKUSHINA, E; CONDER, K et al.Journal of crystal growth. 2012, Vol 360, pp 155-157, issn 0022-0248, 3 p.Conference Paper

Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates : Towards improved surfaces and interfacesKRISHNASWAMI, Kannan; VANGALA, Shivashankar R; DAUPLAISE, Helen M et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1619-1626, issn 0022-0248, 8 p.Article

Dopant segregation during liquid-encapsulated Czochralski crystal growth in a steady axial magnetic fieldMORTON, Joseph L; MA, Nancy; BLISS, David F et al.Journal of crystal growth. 2002, Vol 242, Num 3-4, pp 471-485, issn 0022-0248Article

Bulk PPKTP by crystal growth from high temperature solutionPENA, A; MENAERT, B; BOULANGER, B et al.Journal of crystal growth. 2012, Vol 360, pp 52-55, issn 0022-0248, 4 p.Conference Paper

Grain control in directional solidification of photovoltaic siliconLAN, C. W; LAN, W. C; LEE, T. F et al.Journal of crystal growth. 2012, Vol 360, pp 68-75, issn 0022-0248, 8 p.Conference Paper

Influence of solid―liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fieldsKOZHEMYAKIN, G. N.Journal of crystal growth. 2012, Vol 360, pp 35-37, issn 0022-0248, 3 p.Conference Paper

Three-dimensional simulation and analysis of heat transfer and flow field in micro-floating zone of LHPG with asymmetrical perturbationCHEN, Peng-Yi; HUANG, En-Ping; LO, Chia-Yao et al.Journal of crystal growth. 2012, Vol 360, pp 111-118, issn 0022-0248, 8 p.Conference Paper

Electrical, optical, and analytical characterization of bulk hydrothermal ZnO crystals doped with indiumBUGUO WANG; CALLAHAN, Michael J; BOUTHILLETTE, Lionel O et al.Journal of crystal growth. 2011, Vol 319, Num 1, pp 1-3, issn 0022-0248, 3 p.Article

Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growthCOLLET, Yoan; MAGOTTE, Olivier; VAN DEN BOGAERT, Nathalie et al.Journal of crystal growth. 2012, Vol 360, pp 18-24, issn 0022-0248, 7 p.Conference Paper

Growth of eutectic ceramic structures by directional solidification methodsORERA, V. M; PENA, J. I; OLIETE, P. B et al.Journal of crystal growth. 2012, Vol 360, pp 99-104, issn 0022-0248, 6 p.Conference Paper

Microstructural stability at elevated temperatures of directionally solidified Al₂O₃/Er₃Al₅O₁₂ eutectic ceramicsMESA, M. C; OLIETE, P. B; LARREA, A et al.Journal of crystal growth. 2012, Vol 360, pp 119-122, issn 0022-0248, 4 p.Conference Paper

Numerical studies on a type of mechanical stirring in directional solidification method of multicrystalline silicon for photovoltaic applicationsDUMITRICA, S; VIZMAN, D; GARANDET, J.-P et al.Journal of crystal growth. 2012, Vol 360, pp 76-80, issn 0022-0248, 5 p.Conference Paper

Perfection of NaNO3 single crystals grown by axial vibrational control technique in Czochralski configurationAVETISSOV, I. Ch; SADOVSKIY, A. P; SUKHANOVA, E. A et al.Journal of crystal growth. 2012, Vol 360, pp 167-171, issn 0022-0248, 5 p.Conference Paper

Processing, microstructure and optical properties of the directionally solidified Al₂O₃―EuAlO₃ eutectic rodsOLIETE, Patricia B; MESA, M. Cristina; MERINO, Rosa I et al.Journal of crystal growth. 2012, Vol 360, pp 123-126, issn 0022-0248, 4 p.Conference Paper

Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater methodHOUCHENS, Brent C; BECLA, Piotr; TRITCHLER, Stephanie E et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1090-1094, issn 0022-0248, 5 p.Conference Paper

Hydrothermal growth of Ti:sapphire (Ti³⁺: Al₂O₃) laser crystalsBUGUO WANG; BLISS, David F; CALLAHAN, Michael J et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 443-447, issn 0022-0248, 5 p.Conference Paper

Enhanced crystallization on porous silicon: Facts and modelsSTOLYAROVA, S; BASKIN, E; NEMIROVSKY, Y et al.Journal of crystal growth. 2012, Vol 360, pp 131-133, issn 0022-0248, 3 p.Conference Paper